Freescale Expands Focus and Product Portfolio for RF Land Mobile Market

Freescale Expands Focus and Product Portfolio for RF Land Mobile Market

Airfast RF power solutions deliver exceptional performance and industry-leading ruggedness with new LDMOS and GaN power transistor offerings

SEATTLE--(BUSINESS WIRE)-- Freescale Semiconductor (NYS: FSL) , the leading provider of RF power technology, today introduced the latest additions to its flagship family of Airfast RF power solutions: three LDMOS power transistors and one gallium nitride (GaN) transistor, all designed to exceed stringent land mobile market requirements for exceptional ruggedness.

Freescale's latest Airfast RF power offerings for land mobile applications feature exceptional perfo ...

Freescale's latest Airfast RF power offerings for land mobile applications feature exceptional performance and ruggedness. (Photo: Business Wire)

The new Airfast LDMOS power transistors deliver a compelling combination of stability, gain and ruggedness. The new Airfast GaN device targets multiband applications, where it eliminates the need for large and complex, or even multiple radios. Together, the solutions offer an advanced array of design choices for land mobile applications.

Freescale's new AFT09MS007N, AFT09MP055N and AFT09MS015N LDMOS power amplifiers are engineered to perform flawlessly in extreme operating conditions, delivering exceptional performance, stability and gain for land mobile radio applications. These devices are ideal for mobile VHF, UHF and 700-900 MHz transceivers used in public safety, professional mobile radio and other harsh machine-to-machine communications environments.

The three new Airfast RF LDMOS power products are designed to survive >65:1 VSWR, even with simultaneous over voltage and overdrive stressing the amplifier and its RF power transistors. They integrate much of the circuitry required to maintain stability, thereby simplifying design and supporting stability under a wide range of operation conditions. Accompanied by a comprehensive range of reference designs and requiring only a few inductors and capacitors to complete the design, Freescale's newest LDMOS Airfast RF power products for the land mobile market deliver better efficiency and linearity, in a similar footprint, than module-based solutions. Additionally, Airfast RF power devices typically have 65 percent or more efficiency, significantly more than modules and competitive discrete devices.

"Until now, engineers have faced significant challenges in developing multi-band systems that are large, complex and expensive to design," said Ritu Favre, senior vice president and general manager of Freescale's RF business. "The latest additions to our Airfast RF power portfolio enable exceptional broadband performance to land mobile designers, all within an ultra-compact footprint."

For radio operators and public safety personnel, the ability to communicate with multiple agencies is critical to taking rapid, organized and efficient action during emergency situations. The broadband performance of Freescale's new Airfast AFG30S010 GaN device allows a single power amplifier to support many land mobile bands, eliminating the need to design large, expensive and complex multi-band systems for multi-agency communication. Offering high efficiency and advanced thermal performance, the AFG30S010 GaN device provides the functionality to deliver a reduced amplifier footprint, critical to meeting customer demands for smaller product form factors.

Product specifications

The new Airfast LDMOS devices operate from a nominal 7.5 Vdc supply for handheld radio applications and a 12.5 Vdc supply for mobile radio applications, while integrating ESD protection. The Airfast GaN device operates from a 28 Vdc supply.

AFT09MS007N, AFT09MP055N, AFT09MS015N

  • Survives > 65:1 VSWR with simultaneous over voltage and overdrive
  • Optimized system reliability for lower maintenance costs
  • High power gain needs fewer stages and improves stability
  • High efficiency for simplified cooling and smaller radios


  • 10 W across entire 136-941 MHz frequency band
  • Survives > 20:1 VSWR with simultaneous over voltage and overdrive
  • Improved system reliability with lower maintenance costs
  • Elimination of complex protection circuits, which reduces overall system cost
  • High efficiency across a wide frequency range

Tweet this: @Freescale expands #Airfast land mobile portfolio with additional GaN, LDMOS devices


The AFT09MS007N 7 W and AFT09MP055N 55 W devices are planned for production in Q2 2013. Sample quantities of the AFT09MS015N 15 W and AFG30S010 devices are planned for Q4 2013. Reference designs andother support tools are available to design engineers. For more information, visit, or contact Freescale Sales or a local distributor.

About Freescale

Freescale Semiconductor (NYS: FSL) is a global leader in embedded processing solutions, providing industry-leading products that are advancing the automotive, consumer, industrial and networking markets. From microprocessors and microcontrollers to sensors, analog integrated circuits and connectivity - our technologies are the foundation for the innovations that make our world greener, safer, healthier and more connected. Some of our key applications and end-markets include automotive safety, hybrid and all-electric vehicles, next generation wireless infrastructure, smart energy management, portable medical devices, consumer appliances and smart mobile devices. The company is based in Austin, Texas, and has design, research and development, manufacturing and sales operations around the world.

Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © 2013 Freescale Semiconductor, Inc.

Freescale Semiconductor
Jack Taylor, 512-996-5161
Asia Pacific
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