Rambus Invited to Demonstrate and Present Innovations for Future Main Memory at ISSCC 2013

Updated

Rambus Invited to Demonstrate and Present Innovations for Future Main Memory at ISSCC 2013

SUNNYVALE, Calif.--(BUSINESS WIRE)-- Rambus Inc. (NAS: RMBS) :

Who:

Rambus Inc.

Where:

International Solid-State Circuit Conference

Marriott Marquis Hotel

San Francisco, CA

When:

February 20, 2013 at 8:30 a.m.

Rambus engineers will demonstrate and present innovations for future main memory systems at the 2013 International Solid-State Circuit Conference (ISSCC), the premier forum for showcasing advances in solid-state circuits.


The presentation will highlight a single-ended, low-signal swing transceiver that couples high-speed (up to 6.4Gb/s) read/write capabilities with industry leading power efficiency. This technology can satisfy the demand for high-density, low power and high-speed memory interfaces in cloud computing environments.

Demonstration Session Details:

Title: A 6.4Gb/s Near-Ground Single-Ended Transceiver for Dual-Rank DIMM Memory Interface Systems
8:30 a.m. - 9:00 a.m.

For additional details, visit: www.rambus.com.



Rambus Inc.
Carolyn Robinson, 408-462-8717
crobinson@rambus.com
or
Schwartz MSL for Rambus
Dara Sklar or Jason Morris, 415-512-0770
rambus@schwartzmsl.com

KEYWORDS: United States North America California

INDUSTRY KEYWORDS:

The article Rambus Invited to Demonstrate and Present Innovations for Future Main Memory at ISSCC 2013 originally appeared on Fool.com.

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