ON Semiconductor Drives Power Efficiency and Protection in Portable and Consumer Electronics with New High Performance Devices
Comprehensive portfolio offers highly integrated, feature-rich, lower power products developed specifically for battery-powered, noise-sensitive, space-constrained designs
MUNICH--(BUSINESS WIRE)-- ON Semiconductor (Nasdaq: ONNN), driving innovation in energy efficiency, continues to enable better power conservation in a wide range of portable and consumer electronics with an expanding portfolio of highly integrated, feature-rich, low power solutions for portable and consumer electronics.
Electronica 2012 - New Portable and Consumer Product Launches
ON Semiconductor debuts two new single-channel power MOSFETs for low voltage drive switching at this year's Electronica tradeshow and conference. The new MCH3383 P-channel MOSFET has a drain-to-source voltage (VDSS) of 12 volts (V) and a drain current (ID) of 3.5 amperes (A) with an on-state resistance (RDS(ON)) of 69 milliohms (mΩ), while the MCH3484 N-channel MOSFET has a VDSS of 20 V, an ID of 4.5 A and an RDS(ON) of 330 mΩ. These devices are highly suited to use in IC recorders and smartphones.
The NCP4545, NCP45520/21, and NCP45524/25, also being introduced at the event, are new members of ON Semiconductor's ecoSWITCH family of highly compact, advanced load management solutions for efficient power domain switching. Combing control and drive functionality, these devices each have soft-start via adjustable slew rate control and integrate a low RDS(ON) power MOSFET plus a charge pump. They are suitable for notebook/tablet computers, portable medical equipment, enterprise computing systems, hot swap devices, peripheral ports, telecom and industrial equipment and various portable devices.
Additionally, the NCP333, NCP334, NCP335, NCP336, and NCP337 are newly introduced cost-effective, ultra-compact, high performance load switches. Covering a 1.2 V to 5.5 V input voltage range, these MOSFET-based devices each have a built-in output discharge path to eliminate residual voltages on the output rail. They are optimized for use in cell phones, notebook/tablet computers and digital cameras.
Lastly, the NCP702, NCP703 and NCP729 are low dropout (LDO) linear voltage regulators with a 2.0 V to 5.5 V input voltage range, ultra-low quiescent current and built-in thermal shutdown mechanism. These devices' superior performance characteristics make them highly optimized for noise-sensitive applications, where signal integrity must be maintained, such as phase locked loops, oscillators, frequency synthesizers and low noise amplifiers. Among the end products they will prove particularly suited to inclusion in are smartphones, digital cameras, tablet computers, portable DVD/media players, wireless headsets, wifi boards and portable GPS systems, as well as portable medical equipment.
Visit ON Semiconductor at Electronica 2012, 13 - 16 November, in Hall A5, at Stand 225.
About ON Semiconductor
ON Semiconductor (NAS: ONNN) is driving innovation in energy efficient electronics, empowering design engineers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help customers solve their unique design challenges in automotive, communications, computing, consumer, industrial, medical and military/aerospace applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions. For more information, visit http://www.onsemi.com.
ON Semiconductor and the ON Semiconductor logo are registered trademarks of Semiconductor Components Industries, LLC. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders. Although the company references its Web site in this news release, such information on the Web site is not to be incorporated herein.
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